DMA200X1600NA parallel legs standard rectifier 23 14 part number DMA200X1600NA backside: isolated fav f v v 1.21 rrm 100 1600 = v = v i = a 2x features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20160331a data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
DMA200X1600NA v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.24 r 0.3 k/w r min. 100 v rsm v 200 t = 25c vj t = c vj ma 2 v = v r t = 25c vj i = a f v t = c c 100 p tot 415 w t = 25c c r k/w 100 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.55 t = 25c vj 150 v f0 v 0.80 t = c vj 150 r f 4 m ? v 1.21 t = c vj i = a f v 100 1.61 i = a f 200 i = a f 200 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 53 junction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 1.50 1.62 8.13 7.87 ka ka ka ka 1.28 1.38 11.3 10.9 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.10 ixys reserves the right to change limits, condition s and dimensions. 20160331a data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
DMA200X1600NA ratings abcd zyyww xxxxx product marking logo part no. datecode assembly code assembly line ? d m a 200 x 1600 na part description diode standard rectifier (up to 1800v) parallel legs sot-227b (minibloc) = = = daa200x1800na sot-227b (minibloc) 1800 current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.5 mounting torque 1.1 t vj c 150 virtual junction temperature -40 weight g 30 symbol definition typ. max. min. conditions operation temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 150 a per terminal 125 -40 terminal to terminal daa200xa1800na sot-227b (minibloc) 1800 sot-227b (minibloc) similar part package voltage class dma200xa1600na sot-227b (minibloc) 1600 delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol DMA200X1600NA 518461 tube 10 DMA200X1600NA standard 3000 isol t stg c 150 storage temperature -40 2500 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 2.2 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20160331a data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
DMA200X1600NA 23 14 outlines sot-227b (minibloc) ixys reserves the right to change limits, condition s and dimensions. 20160331a data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
DMA200X1600NA 0,001 0,01 0,1 1 600 800 1000 1200 1400 2 3 4 5 6 7 8 9 01 1 10 3 10 4 10 5 0,4 0,8 1,2 1,6 0 20 40 60 80 100 120 140 160 180 2 00 0 20 40 60 80 100 120 0 30 60 90 120 150 180 0 25 50 75 100 125 150 175 1 10 100 1000 10000 0,0 0,1 0,2 0,3 0,4 i f [a] 0 25 50 75 100 125 150 0 40 80 120 160 200 240 v f [v] i fsm [a] t [s] i 2 t [a 2 s] t [ms] p tot [w] i f(av)m t ]a[ amb [c] i f(av)m [a] t c [c] t [ms] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation vs. direct output current & ambient temperature fig. 5 max. forward current versus case temperature f ig . 6 t r an s ien t t he r m a l i m pedan c e jun c t ion t o c a s e constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.025 0.011 2 0.027 0.002 3 0.048 0.027 4 0.080 0.600 5 0.120 0.220 t vj = 150c t vj = 45c 50 hz, 80% v rrm t vj = 45c t vj = 150c v r = 0 v t vj = 125c 150c r thha : 0.2 k/w 0.4 k/w 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 25c rectifier ixys reserves the right to change limits, condition s and dimensions. 20160331a data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
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